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| Ultra-Low VCE(sat) IGBT IXGH 38N60 VCES I C25 VCE(sat) = 600 V = 76 A = 1.8 V Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 600 600 20 30 76 38 152 ICM = 76 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Features l l l Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l International standard package JEDEC TO-247 AD 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Applications l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5 200 1 100 1.8 V V A mA nA V l l l l BV CES V GE(th) I CES I GES V CE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages l l l Easy to mount with 1 screw (isolated mounting screw hole) Low losses, high efficiency High power density (c) 1996 IXYS All rights reserved 93025C (7/94) IXGH 38N60 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 20 2500 S pF pF pF 150 35 75 nC nC nC ns ns 1200 700 ns ns TO-247 AD Outline gfs Cies Coes Cres Qg Q ge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK I C = I C90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz 230 70 125 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES , RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES , RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 23 50 30 150 600 500 9 40 160 1 800 1000 15 1 = Gate 2 = Collector 3 = Emitter Tab = Collector 15 mJ ns ns mJ ns ns mJ 0.62 K/W 0.25 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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